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Spice simulation of 0.18 /spl mu/m CMOS ring oscillators using physical models for capacitance and series resistance

By: De Meyer, K.; Kubicek, S.; Biesemans, S.;

1997 / IEEE / 0-7803-4100-7

Description

This item was taken from the IEEE Conference ' Spice simulation of 0.18 /spl mu/m CMOS ring oscillators using physical models for capacitance and series resistance ' We present a case study in which ring oscillators, with 0.18 /spl mu/m channel length, are measured and compared with Spice simulations. It is found that good quantitative results can be obtained for several process splits. Special care is taken to include a physical model for the parasitic series resistance R/sub s/(V/sub gs/) and to model correctly the parasitic capacitances obtained from the mask layout.