Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Epitaxial (Ba,Sr)TiO/sub 3/ capacitors with extremely high dielectric constant for DRAM applications

By: Schimizu, T.; Izuha, M.; Abe, K.; Fukushima, N.; Kawakubo, T.;

1997 / IEEE / 0-7803-4100-7

Description

This item was taken from the IEEE Conference ' Epitaxial (Ba,Sr)TiO/sub 3/ capacitors with extremely high dielectric constant for DRAM applications ' A novel dielectric capacitor cell was developed using a (Ba,Sr)TiO/sub 3/ heteroepitaxial technique on SrRuO/sub 3/ electrodes. An extremely high dielectric constant was observed in 20-nm thick (Ba,Sr)TiO/sub 3/ capacitors, which correspond to the effective SiO/sub 2/ thickness of 0.084 nm. The leakage current of these capacitors was found to low and their superior reliability compared to conventional polycrystalline capacitors was confirmed.