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Epitaxial (Ba,Sr)TiO/sub 3/ capacitors with extremely high dielectric constant for DRAM applications
1997 / IEEE / 0-7803-4100-7
This item was taken from the IEEE Conference ' Epitaxial (Ba,Sr)TiO/sub 3/ capacitors with extremely high dielectric constant for DRAM applications ' A novel dielectric capacitor cell was developed using a (Ba,Sr)TiO/sub 3/ heteroepitaxial technique on SrRuO/sub 3/ electrodes. An extremely high dielectric constant was observed in 20-nm thick (Ba,Sr)TiO/sub 3/ capacitors, which correspond to the effective SiO/sub 2/ thickness of 0.084 nm. The leakage current of these capacitors was found to low and their superior reliability compared to conventional polycrystalline capacitors was confirmed.
(basr)tio/sub 3/-srruo/sub 3/
Epitaxial (ba,sr)tio/sub 3/ Capacitor
Srruo/sub 3/ Electrode
High-k Gate Dielectrics
Random Access Memory