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Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

By: Cheng, Y.C.; Xu, J.P.; Lai, P.T.; Huang, L.;

1997 / IEEE / 0-7803-3802-2

Description

This item was taken from the IEEE Conference ' Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET ' An analytical expression for gate-induced drain leakage (GIDL) current based on indirect tunneling theory is described, which can be used for both band-to-band and band-trap-band tunnelings. The voltage and temperature dependence of GIDL and hot-carrier-induced drain leakage are investigated. Experiment shows that interface traps participate in the conduction of GIDL and indirect band-trap-band tunneling could be a major mechanism responsible for GIDL.