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A pocket implant model for sub-0.18 micron CMOS process flows

By: Sridhar, S.; Rodder, M.; Nandakumar, M.; Vasanth, K.; Chen, I.-C.; Mozumder, P.K.;

1997 / IEEE / 0-7803-3775-1

Description

This item was taken from the IEEE Conference ' A pocket implant model for sub-0.18 micron CMOS process flows ' In this paper we present a method of arriving at dopant distributions required for accurate performance estimation of 0.18 micron CMOS flows with pocket implants. Dopant profiles are calculated using a combination of physical and phenomenological models and measured device performance data. The method is demonstrated for NMOS and PMOS devices with varying pocket implant doses, energies and angles, and scaled supply voltages.