Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Improvements on a MOSFET model for non-linear RF simulations
By: Morf, T.; Schmatz, M.L.; Biber, C.E.;
1997 / IEEE / 0-7803-3814-6
This item was taken from the IEEE Periodical ' Improvements on a MOSFET model for non-linear RF simulations ' As the gate lengths of silicon MOSFETs become smaller and smaller, these devices are usable to frequencies in the GHz range. The non-linear MOSFET model presented in this paper is based on S-parameter measurements over a large bias range and has been implemented in a SPICE simulator. The improvements consist of new equations for the non-linear capacitances and output conductance of the MOS transistor. This new large signal model shows very good agreement between measurement and simulation up to 10 GHz.
Large Signal Model
Semiconductor Device Models
Uhf Field Effect Transistors
Microwave Field Effect Transistors
Nonlinear Rf Simulations