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Hot carrier self convergent programming method for multi-level flash cell memory

By: Candeller, Ph.; Hartmann, J.; Martin, F.; Achard, H.; Reimbold, G.; Guillaumot, B.; Mondon, F.;

1997 / IEEE / 0-7803-3575-9

Description

This item was taken from the IEEE Periodical ' Hot carrier self convergent programming method for multi-level flash cell memory ' Flash EEPROM multi-level programming requires accurate control of programmed threshold voltages. A hot carrier convergent programming method with drain current monitoring is proposed to reduce both Vth dispersion and write-erase window closure during endurance test. Feasibility and improved reliability is demonstrated for a four level storage on 0.35 /spl mu/m flash cells.