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Materials properties of B-doped Si by low energy plasma source ion implantation

By: Brunco, D.P.; Matyi, R.J.; Wang, S.; Wang, L.; Larson, L.; Ishida, E.; Felch, S.B.;

1996 / IEEE / 0-7803-3289-X

Description

This item was taken from the IEEE Periodical ' Materials properties of B-doped Si by low energy plasma source ion implantation ' We have performed an analysis of the structural characteristics of silicon following low-energy (3.5 kV) by plasma source ion implantation from a BF/sub 3/ plasma and postimplant rapid thermal annealing. Cross-sectional high resolution transmission electron microscopy imaging has shown that in the as-implanted silicon the first 5 nm is amorphous; no evidence of dislocations or other extended defects was observed. Rutherford backscattering channeling spectra suggest a similar result. High resolution x-ray diffraction analyses revealed a continuous change in the stress in the implanted layer that ranged from highly compressive in the as-implanted Si to moderately tensile in fully annealed samples. All results show that low energy PSII avoids the formation of extended defects and maintain excellent structural quality following annealing.