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A CMOS image sensor with combined analog nonvolatile storage capability

By: Aslam, A.; Zimmer, G.; Vogt, H.; Hosticka, B.J.; Brockherde, W.;

1996 / IEEE / 0-7803-3393-4

Description

This item was taken from the IEEE Periodical ' A CMOS image sensor with combined analog nonvolatile storage capability ' A light-sensitive PMOS-transistor located in a floating n-well and combined with an analog EEPROM has been fabricated as a single element in a standard 1.5 /spl mu/m single-poly CMOS/EEPROM technology. It provides nonvolatile weighted analog image storage and can be programmed in parallel, if implemented as an array. As an example, an image sensor with a nonvolatile analog programmable offset and sensitivity adjustment has been realised.