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Search for the optimal channel architecture for 0.18/0.12 /spl mu/m bulk CMOS experimental study
By: Bouillon, P.; Bodnar, S.; Sagnes, I.; Regolini, J.-L.; Dollfus, P.; Gwoziecki, R.; Kelaidis, C.; Skotnicki, T.;
1996 / IEEE / 0-7803-3393-4
This item was taken from the IEEE Periodical ' Search for the optimal channel architecture for 0.18/0.12 /spl mu/m bulk CMOS experimental study ' Varied advanced architectures for 0.18/0.12 CMOS are investigated experimentally. Performances of heavy ion implanted, epitaxial and/or SiGe channels are compared through their electrical and physical characteristics. Conclusions on optimal 0.18/0.12 /spl mu/m channel architectures are drawn with respect to different applications. Very promising transport properties in SiGe channels are reported.
Germanium Silicon Alloys
Optimal Channel Architecture
Integrated Circuit Technology
Cmos Integrated Circuits
Semiconductor Epitaxial Layers
Heavy Ion Implanted Channels