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Search for the optimal channel architecture for 0.18/0.12 /spl mu/m bulk CMOS experimental study

By: Bouillon, P.; Bodnar, S.; Sagnes, I.; Regolini, J.-L.; Dollfus, P.; Gwoziecki, R.; Kelaidis, C.; Skotnicki, T.;

1996 / IEEE / 0-7803-3393-4

Description

This item was taken from the IEEE Periodical ' Search for the optimal channel architecture for 0.18/0.12 /spl mu/m bulk CMOS experimental study ' Varied advanced architectures for 0.18/0.12 CMOS are investigated experimentally. Performances of heavy ion implanted, epitaxial and/or SiGe channels are compared through their electrical and physical characteristics. Conclusions on optimal 0.18/0.12 /spl mu/m channel architectures are drawn with respect to different applications. Very promising transport properties in SiGe channels are reported.