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A scalable low power vertical memory

By: Hanafi, H.I.; Matsushita, K.; Garg, N.; Thomas, A.; Kocon, W.; Burns, S.; Tiwari, S.;

1995 / IEEE / 0-7803-2700-4


This item was taken from the IEEE Periodical ' A scalable low power vertical memory ' An experimental memory array with the capability of operation at cell area below 0.15 /spl mu/m/sup 2/ for the gigabit generation is described. Channel injection through a thin oxide (/spl sime/3 nm) into the floating gate of a vertical transistor allow scalable, ultra-low power, and dense (4-6 square of the minimum pitch) structures that operate with 100 ns write speeds at low voltages, >10/sup 5/ s retention time, and endurance exceeding 10/sup 10/ cycles with no measurable degradation. Non-volatile structures are achieved with a compromise in speed and power. Multiple-self alignment and use of thin film growth, deposition, and etching techniques allow for a significant reduction in the lithography needs.