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Impact of Coulomb blockade on low-charge limit of memory device

By: Yano, K.; Seki, K.; Murai, F.; Mine, T.; Sano, T.; Ishii, T.;

1995 / IEEE / 0-7803-2700-4

Description

This item was taken from the IEEE Periodical ' Impact of Coulomb blockade on low-charge limit of memory device ' Using a new single-electron memory device having much better control of poly-Si and gate oxide than the reported one, stored-charge probability distribution is directly measured for the first time. This is made possible by the real-time electron counting capability of the memory device. The standard deviation of charge is found to be 0.6 electrons, which clearly demonstrates single-electron-level control capability of our device. The results agree excellently with our new dynamic Coulomb blockade model. Based on these results, the minimum number of stored electrons satisfying 1000-fit 1Gb reliability is revealed to be five.