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Capacitive-division traveling-wave amplifier with 340 GHz gain-bandwidth product

By: Jensen, J.F.; Larson, L.; Rodwell, M.J.W.; Le, M.V.; Nguyen, L.D.; Yu, R.Y.; Agarwal, B.; Pusl, J.; Pullela, R.; Case, M.G.;

1995 / IEEE / 0-7803-2581-8

Description

This item was taken from the IEEE Periodical ' Capacitive-division traveling-wave amplifier with 340 GHz gain-bandwidth product ' We report capacitive-division traveling-wave amplifiers having measured midband gains of 8 dB with a 1-98 GHz 3-dB-bandwidth, and 11 dB gain with a 1-96 GHz bandwidth. The capacitive-division topology raises the input Q of each cell, giving the amplifier increased bandwidth over conventional designs with the same active device technology; using 0.15-/spl mu/m gate length InGaAs-InAlAs HEMTs, bandwidths exceeding 150 GHz are feasible.<>