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A novel Al-reflow process using surface modification by the ECR plasma treatment and its application to the 256 Mbit DRAM

By: Reynolds, R.; Kim, Y.K.; Lee, M.Y.; Ahn, S.T.; Park, S.H.; Park, I.S.; Choi, G.H.; Jung, W.S.; Wee, Y.J.; Lee, S.I.; Park, C.S.;

1994 / IEEE / 0-7803-2111-1

Description

This item was taken from the IEEE Periodical ' A novel Al-reflow process using surface modification by the ECR plasma treatment and its application to the 256 Mbit DRAM ' A novel Al-reflow process with the electron cyclotron resonance (ECR) plasma treatment for the modification of underlayers was developed in a vacuum isolated sputtering equipment. The key feature of this technology is the introduction of the in-situ ECR plasma treatment for the modification of the surface characteristics such as surface morphology and stoichiometry of the TiN wetting/barrier layer. High wettability of the Al film was obtained on the ECR-treated TiN surface, producing a conformal Al film on the sidewall of the contact hole before the reflow process. Consequently, complete filling of contact holes with Al was achieved in deep sub-micron contact holes with a high aspect ratio. This study has demonstrated that the Al-reflow process can be extended to the process of the devices of 256 Mbit DRAM generation and beyond.<>