Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Accurate modeling of GaAs MESFET sidegating effects by trapping simulation

By: Dutton, R.W.; Zhiping Yu; Yi Liu; Deal, M.D.;

1994 / IEEE / 0-7803-2111-1

Description

This item was taken from the IEEE Periodical ' Accurate modeling of GaAs MESFET sidegating effects by trapping simulation ' In this paper, GaAs MESFET sidegating effects are studied by experiment and analysis of carrier trapping process in semi-insulating (SI) GaAs substrates using a trapping model. Two mechanisms responsible for sidegating are revealed. One is the formation of a stationary Gunn domain at the channel-substrate interface. The other is the substrate conduction between a parasitic Schottky contact and the sidegate due to carrier injection.<>