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Accurate modeling of GaAs MESFET sidegating effects by trapping simulation
By: Dutton, R.W.; Zhiping Yu; Yi Liu; Deal, M.D.;
1994 / IEEE / 0-7803-2111-1
This item was taken from the IEEE Periodical ' Accurate modeling of GaAs MESFET sidegating effects by trapping simulation ' In this paper, GaAs MESFET sidegating effects are studied by experiment and analysis of carrier trapping process in semi-insulating (SI) GaAs substrates using a trapping model. Two mechanisms responsible for sidegating are revealed. One is the formation of a stationary Gunn domain at the channel-substrate interface. The other is the substrate conduction between a parasitic Schottky contact and the sidegate due to carrier injection.<
Semiconductor Device Models
Carrier Trapping Process
Semiinsulating Gaas Substrates
Stationary Gunn Domain
Parasitic Schottky Contact
Charge Carrier Processes
Schottky Gate Field Effect Transistors