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Temperature-controlled wafer level Joule-heated constant-current EM tests of W/AlCuSi/W wires

By: Fujisaki, Y.; Anata, Y.; Kubo, M.; Katto, H.; Kawaji, M.;

1994 / IEEE / 0-7803-1757-2

Description

This item was taken from the IEEE Periodical ' Temperature-controlled wafer level Joule-heated constant-current EM tests of W/AlCuSi/W wires ' An automatic wafer level electromigration evaluation system has been newly developed. It quickly increases the stress current until the wire temperature reaches the target temperature by joule-heating. The stress current is then kept constant. The W/AlCuSi/W wires are evaluated with the system and the result is compared with an oven test system. The activation energy, Ea, is constant over the temperatures from 170/spl deg/C to 430/spl deg/C. Ea of 0.93 eV and current exponent, n, of 2.3 are obtained for 1 /spl mu/m wide W/AlCuSi/W wires.<>