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11 GHz bandwidth GaAs MESFET/MSM OEIC receivers
1993 / IEEE / 0-7803-1209-0
This item was taken from the IEEE Periodical ' 11 GHz bandwidth GaAs MESFET/MSM OEIC receivers ' The authors report state-of-the-art performance of a direct ion implanted GaAs MESFET with a 0.6- mu m gate length and an MSM (metal-semiconductor-metal)-based OEIC (optoelectronic integrated circuit) receiver achieving a -3-dB bandwidth as high as 11 GHz for optical signals at a wavelength of 850 nm. The feedback resistance of the receiver is 1000 Omega , and the effective transimpedance is 565 Omega into a 50- Omega load. The effective transimpedance-bandwidth (TZBW) product is 6.1 THz- Omega for this receiver.<
Direct Ion Implanted
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