Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Determination of Si/SiO/sub 2/ interface roughness using weak localization

By: Anderson, W.R.; Mitev, P.H.; Ma, T.P.; Wheeler, R.G.; Lombardi, D.R.;

1993 / IEEE / 0-7803-0978-2

Description

This item was taken from the IEEE Periodical ' Determination of Si/SiO/sub 2/ interface roughness using weak localization ' The authors have measured the interface roughness of intentionally textured Si/SiO/sub 2/ interfaces using the quantum weak localization correction to the electrical conductivity at low temperatures. The deduced roughness was confirmed by observation of the Si surface replicas by atomic force microscopy. Channel electron mobility measurements at 4.2, as well as theoretical calculations, indicate that long length-scale roughness may have little or no impact on the mobility. An appropriate choice for the length scale of morphology measurements must therefore be made when correlating with mobility.<>