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A High-Speed Low Process Complexity Quarter-Micron BiCMOS Technology
By: Fukami, A.; Onose, Y.; Minami, M.; Matsuzaki, N.; Shoji, K.; Watanabe, A.; Tachibana, S.; Nagano, T.; Nishida, T.;
1993 / IEEE
This item was taken from the IEEE Periodical ' A High-Speed Low Process Complexity Quarter-Micron BiCMOS Technology ' A high-performance and producible quarter-micron BiCMOS technology is presented. The same p-type W- polycide is utilized for a CMOS gate and for a self- aligned bipolar base as well to minimize process complexity. For 2.5-V operation, base pre-charge BiNMOS gate circuit verifies the highest speed at any load condition.