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An Analytical Delayed-turn-on Model For Accumulation-type Ultra-thin SOI PMOS Devices Operating At 77K
1993 / IEEE / 0-7803-1338-0
This item was taken from the IEEE Periodical ' An Analytical Delayed-turn-on Model For Accumulation-type Ultra-thin SOI PMOS Devices Operating At 77K ' This paper presents a closed-form analytical delayed-turn-on model for accumulation-type ultra-thin SOI PMOS devices operating in the ""delayed-turn-on"" regime at liquid nitrogen temperature. As verified by the low-temperature PISCES results , the closed-form analytical delayed-turn-on model provides a good explanation of the delayed-turn on behavior.