Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

An Analytical Delayed-turn-on Model For Accumulation-type Ultra-thin SOI PMOS Devices Operating At 77K

By: Kuo, J.B.; Sim, J.H.;

1993 / IEEE / 0-7803-1338-0

Description

This item was taken from the IEEE Periodical ' An Analytical Delayed-turn-on Model For Accumulation-type Ultra-thin SOI PMOS Devices Operating At 77K ' This paper presents a closed-form analytical delayed-turn-on model for accumulation-type ultra-thin SOI PMOS devices operating in the ""delayed-turn-on"" regime at liquid nitrogen temperature. As verified by the low-temperature PISCES results [1], the closed-form analytical delayed-turn-on model provides a good explanation of the delayed-turn on behavior.