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A Numerical Simulation Study Of SiGe/Si-heterostructured PMOS And Dipolar Devices
By: Lu, T.C.; Chen, H.P.; Chen, D.Y.; Kuo, J.B.; Sim, J.H.;
1993 / IEEE / 0-7803-1338-0
This item was taken from the IEEE Periodical ' A Numerical Simulation Study Of SiGe/Si-heterostructured PMOS And Dipolar Devices ' This paper reports a numerical simulation study of SiGe/Si heterostructured PMOS and bipolar devices using a modified 2D device simulation program. As confirmed by published data, the numerical simulation provides a good prediction on the IV characteristics for the SiGe-channel PMOS device and the fr for the SiGe-based bipolar device.