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What can replace BiCMOS at lower supply voltage regime?

By: Nishida, T.; Watanabe, A.; Minami, M.; Hiraki, M.; Shukuri, S.; Nagano, T.;

1992 / IEEE / 0-7803-0817-4

Description

This item was taken from the IEEE Periodical ' What can replace BiCMOS at lower supply voltage regime? ' This paper proposes a design concept for deep submicron BiCMOS technologies operating faster than CMOS under low power supply by eliminating negative effects caused by the built-in voltage V/sub BE/. This is realized by a circuit configuration that temporary saturates and pre-charges the base-emitter junction, and by a self-aligned contact scheme for CMOS and bipolar transistors and a utilization of p-n-p transistors. Excellent circuit performance is demonstrated at supply voltages ranging from 3.3 to 1.5 volts.<>