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Future BiCMOS technology for scaled supply voltage

By: Shukuri, S.; Nagano, T.; Watanabe, A.; Ikeda, T.;

1989 / IEEE / 0-7803-0817-4

Description

This item was taken from the IEEE Periodical ' Future BiCMOS technology for scaled supply voltage ' A BiCMOS technology for future scaled supply voltage, V/sub x/, is described. Delay time reduction by around 100 ps is achieved by introducing a proposed base electrode surround emitter transistor (BEST). Two types of gates, CBiCMOS and BiNMOS, provide shorter gate delays and higher drivabilities than the CMOS gate even with V/sub s/, of 3.3 V. It is concluded that the innovations in the bipolar transistor structure BEST and in the CBiCMOS and BiNMOS gate circuit configuration are highly promising in comparison to CMOS ULSIs for future high-speed and high-density ULSIs operating at scaled supply voltages.<>