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A CMOS process for high temperature sensors and circuits

By: Ghezzo, M.; Wu, K.-C.; Brown, R.B.; Brown, D.M.;

1988 / IEEE

Description

This item was taken from the IEEE Periodical ' A CMOS process for high temperature sensors and circuits ' Progress in junction-isolated CMOS technology for high-temperature operation is reported. Variations on an advanced 1.25- mu m VLSI process have addressed two of the most serious high-temperature problems in CMOS: refractory metallization has eliminated the problem of electromigration; and process variations have doubled latchup holding voltage and current at 300 degrees C. The high-temperature process has improved both holding current and holding voltage at 300 degrees C by more than a factor of two over the already excellent performance of the standard A/VLSI process. Holding voltage at 300 degrees C is four times better in the special process than in bulk CMOS, and holding current is 30 times better than in the bulk process.<>