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Modeling p-types dopants in gallium arsenide with SUPREM 3.5
By: Robinson, H.G.; Hansen, S.E.; Deal, M.D.;
1988 / IEEE
This item was taken from the IEEE Periodical ' Modeling p-types dopants in gallium arsenide with SUPREM 3.5 ' A computer simulation program has been developed which simulates the processes used to fabricate ion-implanted GaAs integrated circuits. This 1-D simulator, named SUPREM 3.5, predicts the structure and doping profiles of the channel and source/drain regions of GaAs MESFETs and JFETs using recently developed models and recently determined parameters for ion implantation, diffusion, and activation. The simulator can model not only the common n-type dopants, but also the p-type dopants (e.g. Be and Mg) used in JFET and buried p-layer structures SUPREM 3.5 can be used to determine the optimal process conditions for the different structures and dopants, and also to assist in determining which dopant to use.<
Gaas Integrated Circuits
Buried P-layer Structures
Optimal Process Conditions
Semiconductor Process Modeling
Field Effect Integrated Circuits
Semiconductor Device Models