Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Modeling p-types dopants in gallium arsenide with SUPREM 3.5

By: Robinson, H.G.; Hansen, S.E.; Deal, M.D.;

1988 / IEEE

Description

This item was taken from the IEEE Periodical ' Modeling p-types dopants in gallium arsenide with SUPREM 3.5 ' A computer simulation program has been developed which simulates the processes used to fabricate ion-implanted GaAs integrated circuits. This 1-D simulator, named SUPREM 3.5, predicts the structure and doping profiles of the channel and source/drain regions of GaAs MESFETs and JFETs using recently developed models and recently determined parameters for ion implantation, diffusion, and activation. The simulator can model not only the common n-type dopants, but also the p-type dopants (e.g. Be and Mg) used in JFET and buried p-layer structures SUPREM 3.5 can be used to determine the optimal process conditions for the different structures and dopants, and also to assist in determining which dopant to use.<>