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The origin of gate hysteresis and gate delay of MESFETs appear under low frequency operation

By: Fujisaki, Y.; Matsunaga, N.;

1988 / IEEE

Description

This item was taken from the IEEE Periodical ' The origin of gate hysteresis and gate delay of MESFETs appear under low frequency operation ' The very slow response of MESFETs to the gate signal is investigated in relation to deep levels in a bulk crystal. It is demonstrated that this response originates from a complex of recombination centers and hole traps whose level is connected with arsenic vacancies. The activation energy of these traps is approximately 0.40 eV. This slow response is also attributable to the transconductance degradation under high-frequency MESFET operation. It is shown that the arsenic-poor composition of the crystal can be compensated by the P and SI coimplantation technique.<>