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S-band eight watt power amplifier MMICs
By: Komiak, J.J.;
1988 / IEEE
This item was taken from the IEEE Periodical ' S-band eight watt power amplifier MMICs ' The design and performance of a pair of S-band GaAs MMIC (monolithic microwave integrated-circuit) power amplifier chips with greater than 8.0-W power output are reported. The design, fabricated in 1.0- mu m-gate-length epitaxial technology, also has 26% power-added efficiency at 3.7 GHz and 8.0 W, and up to 31% at lower drain bias. The 0.5- mu m-gate-length selective implant design is capable of an output of 6.0 to 8.3 W from 2.8 GHz to 4.8 GHz. A Wilkinson power-combined pair of MMICs has delivered 12 W at 21% power-added efficiency from 3.1 to 3.5 GHz, and 13.5 W with increased drain voltage.<
Integrated Circuit Technology
Power Amplifier Chips
Selective Implant Design
Wilkinson Power-combined Pair Of Mmics
26 To 31 Percent
2.8 To 4.8 Ghz
Field Effect Integrated Circuits