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Electric breakdown and electroluminescence in tantalum pentoxide films

By: Miyairi, K.;

1988 / IEEE / 4-88686-041-9


This item was taken from the IEEE Periodical ' Electric breakdown and electroluminescence in tantalum pentoxide films ' As the breakdown of dielectric thin films subjected to high electric fields is the ultimate stage in the lifespan of devices, further information on the breakdown mechanism is very important in the development of high-quality electronic devices and integrated circuits. In this study, electrical breakdown and electroluminescence in anodic Ta/sub 2/O/sub 5/ thin films have been measured. No explicit dependences on thickness and temperature in dielectric breakdown have been observed in these films. Therefore it is difficult to determine the mechanism whether it is electronic or thermal. Also, an attempt has been made to investigate the basic process of electrical breakdown from an optical point of view in the prebreakdown field.