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A novel scaled down oxygen implanted polysilicon resistor for future static RAMs
By: Saito, R.; Momma, N.; Nagano, T.; Sawahata, Y.;
1986 / IEEE
This item was taken from the IEEE Periodical ' A novel scaled down oxygen implanted polysilicon resistor for future static RAMs ' A novel scaled down high resistor (1�m or less in length) for future static RAMs was realized by using the slow arsenic diffusion in oxygen implanted polysilicon, where arsenic is partially doped to form polysilicon interconnection layer. The current voltage characteristics of the oxygen doped polysilicon resistors were almost linear, and the marked decrease in resistance for higher applied voltage, observed in non-doped polysilicon, could not be found. Moreover the field effect modulation of the resistance in the oxygen doped polysilicon was much less than that of non-doped one. Applicability of the scaled down oxygen implanted polysilicon resistor was thus demonstrated for future static RAMs.