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A trench transistor cross-point DRAM cell

By: Richardson, W.F.; Bordelon, D.M.; Chatterjee, P.K.; Davis, H.E.; Gallia, J.; Wang, C.-P.; Womack, R.H.; Elahy, M.; Banerjee, S.K.; Shichijo, H.; Malhi, S.D.S.; Shah, A.H.; Pollack, G.P.;

1985 / IEEE


This item was taken from the IEEE Periodical ' A trench transistor cross-point DRAM cell ' A 1T DRAM cell with both the transistor and the capacitor fabricated on the sidewalls of a deep trench is described. Trench Transistor Cell (TTC) fabrication and characterization are discussed.