Use this resource - and many more! - in your textbook!
AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.
Polysilicon transistors in VLSI MOS memories
By: Shichijo, H.; Malhi, S.D.S.; Chatterjee, P.K.; Lam, H.W.; Womack, R.H.; Sundaresan, R.; Elahy, M.; Banerjee, S.K.; Hite, L.R.; Shah, A.H.; Pollack, G.P.; Richardson, W.F.;
1984 / IEEE
This item was taken from the IEEE Periodical ' Polysilicon transistors in VLSI MOS memories ' The recent progress on the use of as-deposited, small grain LPCVD polysilicon transistors in VLSI memories is discussed with the emphasis on their applications for static and dynamic RAMs. Some process and device related issues are discussed. Successful implementation of an experimental stacked CMOS 64K sRAM proves the utility of these devices for three dimensional integration in a VLSI environment.