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Polysilicon transistors in VLSI MOS memories

By: Shichijo, H.; Malhi, S.D.S.; Chatterjee, P.K.; Lam, H.W.; Womack, R.H.; Sundaresan, R.; Elahy, M.; Banerjee, S.K.; Hite, L.R.; Shah, A.H.; Pollack, G.P.; Richardson, W.F.;

1984 / IEEE


This item was taken from the IEEE Periodical ' Polysilicon transistors in VLSI MOS memories ' The recent progress on the use of as-deposited, small grain LPCVD polysilicon transistors in VLSI memories is discussed with the emphasis on their applications for static and dynamic RAMs. Some process and device related issues are discussed. Successful implementation of an experimental stacked CMOS 64K sRAM proves the utility of these devices for three dimensional integration in a VLSI environment.