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SOI CMOS circuit performance on graphite strip heater recrystallized material
1982 / IEEE
This item was taken from the IEEE Periodical ' SOI CMOS circuit performance on graphite strip heater recrystallized material ' A CMOS process has been implemented on graphite strip heater recrystallized silicon substrates. The low field electron mobility of 660 cm2/V.sec and hole mobility of 220 cm2/V.sec is obtained. For a gate length of 5 �m and gate oxide thickness of 500 � the average inverter delay is 1.85 ns, as obtained from 39 stage ring oscillators with a fan-in and fan-out of 1, operated at 5 V.