Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

SOI CMOS circuit performance on graphite strip heater recrystallized material

By: Pinizzotto, R.F.; Lam, H.W.; Malhi, S.D.S.;

1982 / IEEE

Description

This item was taken from the IEEE Periodical ' SOI CMOS circuit performance on graphite strip heater recrystallized material ' A CMOS process has been implemented on graphite strip heater recrystallized silicon substrates. The low field electron mobility of 660 cm2/V.sec and hole mobility of 220 cm2/V.sec is obtained. For a gate length of 5 �m and gate oxide thickness of 500 � the average inverter delay is 1.85 ns, as obtained from 39 stage ring oscillators with a fan-in and fan-out of 1, operated at 5 V.