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Subsurface junction field effect transistor (SJFET)

By: Malhi, S.D.S.; Barber, H.D.; Donnison, W.; Salama, C.A.T.;

1980 / IEEE

Description

This item was taken from the IEEE Periodical ' Subsurface junction field effect transistor (SJFET) ' A novel, bipolar compatible junction field effect transistor structure is described in this paper. The device is fabricated using a single high energy boron implant which results in a p-type channel embedded in an n-epitaxial background material. The channel is buffered from the Si/SiO2interface by a thin n-type layer which improves device reproducibility. The resulting devices exhibit controllable pinchoff voltages in the subvolt range.