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Subsurface junction field effect transistor (SJFET)
1980 / IEEE
This item was taken from the IEEE Periodical ' Subsurface junction field effect transistor (SJFET) ' A novel, bipolar compatible junction field effect transistor structure is described in this paper. The device is fabricated using a single high energy boron implant which results in a p-type channel embedded in an n-epitaxial background material. The channel is buffered from the Si/SiO