Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Subsurface junction field effect transistor (SJFET)

By: Malhi, S.D.S.; Barber, H.D.; Donnison, W.; Salama, C.A.T.;

1980 / IEEE


This item was taken from the IEEE Periodical ' Subsurface junction field effect transistor (SJFET) ' A novel, bipolar compatible junction field effect transistor structure is described in this paper. The device is fabricated using a single high energy boron implant which results in a p-type channel embedded in an n-epitaxial background material. The channel is buffered from the Si/SiO2interface by a thin n-type layer which improves device reproducibility. The resulting devices exhibit controllable pinchoff voltages in the subvolt range.