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Limitations on injection efficiency in power devices

By: Temple, V.A.K.; Krishna, S.; Beatty, B.A.; Adler, M.S.; Torreno, M.L.;

1975 / IEEE

Description

This item was taken from the IEEE Periodical ' Limitations on injection efficiency in power devices ' In this paper the mechanisms of bandgap narrowing, Shockly-Read-Hall (SRH) recombination, Auger recombination, and carrier-carrier and carrier-lattice scattering are included in an exact one-dimensional model of a bipolar transistor. The transistor is used as a vehicle for studying the relative importance of each of these phenomena in determining emitter efficiency in devices with emitter junction depths of 1�m to 8�m. It is shown that band gap narrowing is the dominant influence for devices with shallow emitters of 2�m or less and that SRH recombination dominates for emitter depths greater than 4�m. Calculations are also presented showing the effects of the emitter surface concentration and high level injection on the current gain for devices with emitter junction depths of 1 �m to 8�m. It is shown that there is an optimum surface concentration of5\times10^{19}cm-3for the 1�m emitter depth but no optimum under 1021cm-3for devices with emitter depths greater than 4�m.