Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

High Peak Power Operation of a 1- � m GaAs-Based Optically Pumped Semiconductor Laser

By: Koch, S.W.; Moloney, J.V.; Yarborough, M.J.; Hader, J.; Kunert, B.; Tsuei-Lian Wang; Laurain, A.; Stolz, W.;

2012 / IEEE

Description

This item was taken from the IEEE Periodical ' High Peak Power Operation of a 1- � m GaAs-Based Optically Pumped Semiconductor Laser ' We report room-temperature high-peak-power operation of an optically pumped semiconductor laser based on the InGaAs/GaAs material system. We present the design of the semiconductor structure and optimization strategies to extract the maximum pulsed peak power. The gain structure was pumped by a 775-nm Alexandrite laser with a pulsewidth adjustable from 400 ns to 1 �s and a repetition rate of 3 Hz. A new record peak power of 400 W at a wavelength of 1020 nm was obtained with a Gaussian-shaped submicrosecond pulse. An optical-to-optical efficiency of 28% is demonstrated at maximum power. The key parameters limiting the output power are discussed.