Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Transparent In-Plane-Gate Junctionless Oxide-Based TFTs Directly Written by Laser Scribing

By: Liqiang Zhu; Qing Wan; Hongliang Zhang; Jumei Zhou; Guodong Wu;

2012 / IEEE

Description

This item was taken from the IEEE Periodical ' Transparent In-Plane-Gate Junctionless Oxide-Based TFTs Directly Written by Laser Scribing ' A laser-scribing process without any mask and photolithography is developed for transparent junctionless oxide based in-plane-gate thin-film transistor (TFT) fabrication at room temperature. Such junctionless TFTs feature that the channel and the source/drain electrodes are of the same thin indium-zinc-oxide films. Good electrical performance with an Ion/Ioff ratio of 4 �105, a field-effect mobility of 15 cm2/V � s, and a subthreshold swing of 0.12 V/dec is obtained. AND logic is realized with a reliable logic operation in a dual in-plane-gate configuration. The developed laser-scribing technology is highly desirable in terms of the low-cost fabrication process.