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A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50-$\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture

By: Nguyen, B.Y.; Yeo, Y.C.; Liu, W.J.; Zhu, W.; Tran, X.A.; Hong Yu Yu;

2012 / IEEE

Description

This item was taken from the IEEE Periodical ' A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50-$\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture ' In this letter, a bipolar resistive switching RAM based on Ni/AlOy/n+-Si which exhibits high potential to realize transistor-free operation for cross-bar array is successfully demonstrated. The proposed device shows well-behaved bipolar memory performance with self-rectifying behavior in low-resistance state (>; 700 at 0.2 V), a high on/off resistance ratio (>;103), a good retention characteristic (>; 104 s at 100 �C ), and a wide readout margin for cross-bar architecture (number of word line N >; 25 for worst case condition).