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Extraction of Isothermal Condition and Thermal Network in UTBB SOI MOSFETs
By: Hu, C.; Venugopalan, S.; Chauhan, Y.S.; Karim, M.A.; Sachid, A.B.; Niknejad, A.M.; Faynot, O.; Nguyen, B.Y.; Lu, D.D.;
2012 / IEEE
This item was taken from the IEEE Periodical ' Extraction of Isothermal Condition and Thermal Network in UTBB SOI MOSFETs ' In this letter, we present a thermal network extraction methodology to characterize self-heating effect using two-port RF measurements. We show the technique of determining isothermal condition using only the self-heating (thermal) dominated range of the spectrum. We use a self-consistent self-heating extraction scheme using both the real and imaginary parts of drain port admittance parameters. Appropriate thermal network is investigated, and a large amount of temperature rise due to self-heating is confirmed for short channel silicon-on-insulator MOSFETs with ultrathin body and buried oxide.
Two-port Rf Measurements
Self-consistent Self-heating Extraction Scheme
Drain Port Admittance Parameters
Short Channel Silicon-on-insulator Mosfet
Ultrathin Body Silicon-on-insulator Metal-oxide-semiconductor Field Effect Transistors
Ultrathin Body (utb) And Buried Oxide (box) (utbb) Silicon-on-insulator (soi)
Thermal Network Extraction Methodology
Utbb Soi Mosfet
Isothermal Condition Extraction
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas