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Highly Reliable Integrated Gate Driver Circuit for Large TFT-LCD Applications

By: Chun-Da Tu; Mao-Hsun Cheng; Chih-Lung Lin; Min-Chin Chuang;

2012 / IEEE

Description

This item was taken from the IEEE Periodical ' Highly Reliable Integrated Gate Driver Circuit for Large TFT-LCD Applications ' This letter presents a novel integrated hydrogenated amorphous silicon thin-film transistor (a-Si:H TFT) gate driver circuit using ac driving (33% duty) to prevent the floating of row lines and reduce the bias voltage of pull-down TFTs to suppress the threshold voltage (VTH) shift of a-Si:H TFTs. The VTH shift of the TFTs in this design is reduced by 49.93% from that achieved using the 25%-duty ac-driving structure. In a reliability test, the new circuit operates stably at a high temperature (T = 60�C) for more than 240 h.