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A Self-Rectifying $\hbox{HfO}_{x}$ -Based Unipolar RRAM With NiSi Electrode

By: Zhu, W.G.; Nguyen, B.Y.; Tran, X.A.; Yu, H.Y.; Li, M.F.; Gao, B.; Yeo, Y.C.; Wang, Z.R.; Fang, Z.; Liu, W.J.; Kang, J.F.;

2012 / IEEE


This item was taken from the IEEE Periodical ' A Self-Rectifying $\hbox{HfO}_{x}$ -Based Unipolar RRAM With NiSi Electrode ' In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfOx/TiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (>; 103 at 1 V); 3) well-behaved memory performance, such as high on/off resistance ratio (>; 102) and good retention characteristics (>;105 s at 125 �C ); and 4) wide readout margin for high-density cross-point memory devices (number of word lines 106 for the worst case condition).