Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

A Self-Rectifying $\hbox{HfO}_{x}$ -Based Unipolar RRAM With NiSi Electrode

By: Zhu, W.G.; Nguyen, B.Y.; Tran, X.A.; Yu, H.Y.; Li, M.F.; Gao, B.; Yeo, Y.C.; Wang, Z.R.; Fang, Z.; Liu, W.J.; Kang, J.F.;

2012 / IEEE

Description

This item was taken from the IEEE Periodical ' A Self-Rectifying $\hbox{HfO}_{x}$ -Based Unipolar RRAM With NiSi Electrode ' In this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfOx/TiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (>; 103 at 1 V); 3) well-behaved memory performance, such as high on/off resistance ratio (>; 102) and good retention characteristics (>;105 s at 125 �C ); and 4) wide readout margin for high-density cross-point memory devices (number of word lines 106 for the worst case condition).