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Annealing at Different Temperatures of Silicon Microstrip Detectors After Severe Hadron Irradiation
By: Affolder, A.; Casse, G.; Wormald, M.; Tsurin, I.; Huse, T.; Greenall, A.; Forshaw, D.; Chmill, V.; Allport, P.P.;
2012 / IEEE
This item was taken from the IEEE Periodical ' Annealing at Different Temperatures of Silicon Microstrip Detectors After Severe Hadron Irradiation ' Two rather recent results from studies performed for preparing high resolution sensors for the future supercolliders (HL-LHC at CERN) have proven that silicon detectors read out with low noise electronics can be used for tracking minimum ionizing particles (mip) after doses up to if high bias voltage and adequate cooling can be routed to the sensors. These are the discovery of the charge multiplication mechanism taking place in irradiated n-in-p silicon detectors and the suppression of the reverse annealing. A discussion of this last feature and the influence of the annealing temperature is presented here.
Severe Hadron Irradiation
Silicon Detector Readout
Low Noise Electronics
Minimum Ionizing Particle Tracking
Charge Multiplication Mechanism
Irradiated N In P Silicon Detectors
Reverse Annealing Suppression
Microstrip Silicon Detectors
Silicon Microstrip Detectors
High Resolution Sensor Preparation