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Visible Light and Low-Energy UV Effects on Organic Thin-Film Transistors
2012 / IEEE
This item was taken from the IEEE Periodical ' Visible Light and Low-Energy UV Effects on Organic Thin-Film Transistors ' We evaluated the effects of low-energy ultraviolet (UV) and visible light in organic thin-film-transistors, with an hexamethyldisilazane-treated SiO2 gate dielectric. After visible-light irradiation, the devices showed temporary variation in the threshold voltage, drain current, and transconductance. When UV irradiation is performed, the devices exhibit significant and permanent degradation, with a transconductance drop up to -18%.
Hexamethyldisilazane-treated Gate Dielectric
Organic Thin Film Transistors
Charge Carrier Processes
Ultraviolet (uv) Irradiation
Thin Film Transistors
Ultraviolet Radiation Effects
Engineered Materials, Dielectrics And Plasmas
Components, Circuits, Devices And Systems
Organic Thin-film Transistors