Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Electrical and Photosensivity Characteristics of Hybrid/Composite ZnO Nanorod Transistors

By: Liang-Wen Ji; Yan-Kuin Su; Shi-Ming Peng;

2011 / IEEE

Description

This item was taken from the IEEE Periodical ' Electrical and Photosensivity Characteristics of Hybrid/Composite ZnO Nanorod Transistors ' This letter shows the bottom-contact-type transistors with free-standing ZnO NR arrays that were fabricated by hydrothermal decomposition. The NR arrays were selectively grown in the channel layer between the source and drain electrodes in order to enhance the electrical characteristics of the hybrid/composite NR transistors. The on/off current ratio and mobility of hybrid/composite NR transistors (3.98 �105; 0.66 cm2�V-1�s-1) are higher than those of the ZnO film transistors (2.2 �104; 0.29 cm2�V-1�s-1). The relative photoconductivity (�) and photoresponsivity (R) of hybrid/composite NR transistors (�NR = 4.6 �105; R = 0.2 A/W) performed better than conventional film transistors (�film = 2.27 �102; R = 1.06 �10-3 A/W) in the depletion region (VDS = -19 V; VGS = 50 V ).