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Electrical and Photosensivity Characteristics of Hybrid/Composite ZnO Nanorod Transistors
By: Liang-Wen Ji; Yan-Kuin Su; Shi-Ming Peng;
2011 / IEEE
This item was taken from the IEEE Periodical ' Electrical and Photosensivity Characteristics of Hybrid/Composite ZnO Nanorod Transistors ' This letter shows the bottom-contact-type transistors with free-standing ZnO NR arrays that were fabricated by hydrothermal decomposition. The NR arrays were selectively grown in the channel layer between the source and drain electrodes in order to enhance the electrical characteristics of the hybrid/composite NR transistors. The on/off current ratio and mobility of hybrid/composite NR transistors (3.98 �105; 0.66 cm2�V-1�s-1) are higher than those of the ZnO film transistors (2.2 �104; 0.29 cm2�V-1�s-1). The relative photoconductivity (�) and photoresponsivity (R) of hybrid/composite NR transistors (�NR = 4.6 �105; R = 0.2 A/W) performed better than conventional film transistors (�film = 2.27 �102; R = 1.06 �10-3 A/W) in the depletion region (VDS = -19 V; VGS = 50 V ).
Thin Film Transistors
Wide Band Gap Semiconductors
Hybrid-composite Nanorod Transistor
Free-standing Nr Array
On-off Current Ratio
Voltage -19 V
Voltage 50 V
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas