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Towards Achieving the Soft-Punch-Through Superjunction Insulated-Gate Bipolar Transistor Breakdown Capability

By: Bauer, F.; Udrea, F.; Antoniou, M.; Nistor, I.; Mihaila, A.;

2011 / IEEE

Description

This item was taken from the IEEE Periodical ' Towards Achieving the Soft-Punch-Through Superjunction Insulated-Gate Bipolar Transistor Breakdown Capability ' The termination design of superjunction (SJ) structures has always been a conceptual and technological challenge. In this letter, we propose new, optimized, elegant, and cost-efficient solutions toward the realization of the first 1.2-kV rated SJ insulated-gate bipolar transistor. The design is based on the utilization of existing layers in the device fabrication line, hence resulting in no extra complexity or cost increase. The proposed design effectiveness is confirmed through extensive numerical simulations.