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A High-Yield $\hbox{HfO}_{x}$-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration

By: Tran, X.A.; Yu, H.Y.; Yeo, Y.C.; Wu, L.; Liu, W.J.; Li, M.F.; Fang, Z.; Pey, K.L.; Sun, X.W.; Du, A.Y.; Nguyen, B.Y.; Wang, Z.R.;

2011 / IEEE

Description

This item was taken from the IEEE Periodical ' A High-Yield $\hbox{HfO}_{x}$-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar Integration ' In this letter, a resistive random access memory based on Ni electrode/HfOx, dielectric/n+ Si substrate structure is demonstrated, which can be integrated with Si diode as selector for application in crossbar architecture. The unipolar device shows well-behaved memory performance, such as high ON/OFF resistance ratio (>; 103), good retention characteristics (>; 105 s at 150 �C), satisfactory pulse switching endurance (>; 105 cycles), and a fast programming speed of about 50 ns. More importantly, it also exhibits almost 100% device yield on a 6-in wafer.