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Magnetic Properties of Zn$_{1 - {\rm x}} {\hbox {Co}}_{\rm x}$O Thin Films Grown by RF Magnetron Co-Sputtering in Ar and N$_{2}$O Atmosphere
This item was taken from the IEEE Periodical ' Magnetic Properties of Zn$_{1 - {\rm x}} {\hbox {Co}}_{\rm x}$O Thin Films Grown by RF Magnetron Co-Sputtering in Ar and N$_{2}$O Atmosphere ' The Zn1-xCoxO and Zn1-xCoxNyO1-y thin films were grown by RF magnetron co-sputtering, but in different sputtering gases (Ar and N2O, respectively). X-ray diffraction analysis indicated that all the samples had c-axis preferred orientation, without any segregated secondary phase. UV-visible spectroscopy and X-ray photoelectron spectroscopy showed that Co2+ ions substituted tetrahedrally coordinated Zn2+ ions site for the films. The electrical and magnetic properties were investigated by the Hall effect and superconducting quantum interference device (SQUID) measurements, respectively. The Zn1-xCoxO had n-type conduction with electron concentration of 1019 cm-3, and exhibited paramagnetism. Due to the charge compensation by N doping, the Zn1-xCoxNyO1-y possessed large resistivity, and also presented paramagnetism, besides the film Zn1- xCoxNyO1-y (x = 0.0162, y = 0.0004) , which possessed room temperature ferromagnetism (RTFM).