Your Search Results

Use this resource - and many more! - in your textbook!

AcademicPub holds over eight million pieces of educational content for you to mix-and-match your way.

Experience the freedom of customizing your course pack with AcademicPub!
Not an educator but still interested in using this content? No problem! Visit our provider's page to contact the publisher and get permission directly.

Magnetic Properties of Zn$_{1 - {\rm x}} {\hbox {Co}}_{\rm x}$O Thin Films Grown by RF Magnetron Co-Sputtering in Ar and N$_{2}$O Atmosphere

By: Lee, J.C.; Hsu, H.S.; Lee, J.S.; Su, C.W.; Min, J.F.; Lee, Y.H.;

2011 / IEEE

Description

This item was taken from the IEEE Periodical ' Magnetic Properties of Zn$_{1 - {\rm x}} {\hbox {Co}}_{\rm x}$O Thin Films Grown by RF Magnetron Co-Sputtering in Ar and N$_{2}$O Atmosphere ' The Zn1-xCoxO and Zn1-xCoxNyO1-y thin films were grown by RF magnetron co-sputtering, but in different sputtering gases (Ar and N2O, respectively). X-ray diffraction analysis indicated that all the samples had c-axis preferred orientation, without any segregated secondary phase. UV-visible spectroscopy and X-ray photoelectron spectroscopy showed that Co2+ ions substituted tetrahedrally coordinated Zn2+ ions site for the films. The electrical and magnetic properties were investigated by the Hall effect and superconducting quantum interference device (SQUID) measurements, respectively. The Zn1-xCoxO had n-type conduction with electron concentration of 1019 cm-3, and exhibited paramagnetism. Due to the charge compensation by N doping, the Zn1-xCoxNyO1-y possessed large resistivity, and also presented paramagnetism, besides the film Zn1- xCoxNyO1-y (x = 0.0162, y = 0.0004) , which possessed room temperature ferromagnetism (RTFM).