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First Internal Spacers' Introduction in Record High $I_{\rm ON}/I_{\rm OFF}\ \hbox{TiN/HfO}_{2}$ Gate Multichannel MOSFET Satisfying Both High-Performance and Low Standby Power Requirements

By: Ernst, T.; Bernard, E.; Faynot, O.; Deleonibus, S.; Skotnicki, T.; Guillaumot, B.; Danneville, F.; Rozeau, O.; Coronel, P.; Tao Chuan Lim; Vulliet, N.;

2009 / IEEE

Description

This item was taken from the IEEE Periodical ' First Internal Spacers' Introduction in Record High $I_{\rm ON}/I_{\rm OFF}\ \hbox{TiN/HfO}_{2}$ Gate Multichannel MOSFET Satisfying Both High-Performance and Low Standby Power Requirements ' For the first time, internal spacers have been introduced in multichannel CMOSFET (MCFET) structures, featuring a decrease of the intrinsic CV/I delay by 39%. The process steps introduced for this new MCFET technological option are studied and optimized in order to achieve excellent ION/IOFF characteristics (NMOS: 2.33 mA/mum at 27 pA/mum and PMOS: 1.52 mA/mum at 38 pA/mum). A gate capacitance C gg reduction of 32% is measured, thanks to S-parameter extraction. Moreover, a significant improvement of the analogical figure of merit is measured compared with optimized fully depleted silicon-on-insulator planar reference; the voltage gain A VI( = gm/g ds) is improved by 92%.