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Electrooptical Modulator Fabricated by Gallium Diffusion in Lithium Niobate
By: Chia-Wei Lin; Wen-Hung Huang; Way-Seen Wang;
2008 / IEEE
Description
This item was taken from the IEEE Periodical ' Electrooptical Modulator Fabricated by Gallium Diffusion in Lithium Niobate ' Mach-Zehnder modulators fabricated by gallium diffusion in y-cut lithium niobate (LiNbO) are presented. The measured halfwave voltages are 6.2 and 3.2 V when the electrode lengths are 0.4 and 0.8 cm, respectively. By calculating the overlap integral between the modulating electric and the guided optical fields, the value of the electrooptic coefficient is found in good agreement with that of the bulk LiNbO, which indicates no significant degradation in is induced by the in-diffused gallium atoms.
Related Topics
Electro-optical Effects
Electro-optical Modulation
Gallium
Lithium Compounds
Mach-zehnder Interferometers
Optical Fabrication
Ga
Electrooptical Modulator Fabrication
Lithium Niobate
Mach-zehnder Modulator
Halfwave Voltage
Gallium-diffused Waveguide
Voltage 6.2 V
Voltage 3.2 V
Linbo3
Electrooptic Modulators
Lithium Niobate
Optical Waveguides
Optical Modulation
Electrodes
Electrooptical Waveguides
Optical Polarization
Atom Optics
High Speed Optical Techniques
Optical Sensors
Mach–zehnder Modulator
Electrooptic Coefficient
Gallium-diffused Waveguide
Lithium Niobate
Optical Waveguides
Photonics And Electrooptics
Engineered Materials, Dielectrics And Plasmas
Engineering
Electrooptic Coefficient
