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Anomalous Electron Storage Decrease in MONOS' Nitride Layers Thinner Than 4 nm
2008 / IEEE
This item was taken from the IEEE Periodical ' Anomalous Electron Storage Decrease in MONOS' Nitride Layers Thinner Than 4 nm ' An anomalous decrease in electron-storage capability of metal-oxide-nitride-oxide-silicon (MONOS) was observed in the range of nitride thickness below 4 nm. This decrease can be explained by assuming transition layers with electron traps at oxide/nitride interfaces or inhomogeneous growth of nitride in the early stage of the growth. To decrease the nitride thickness of a MONOS memory below 4 nm for lower power operation and further device scaling down, transition layer should be thinned, or nitride roughness should be reduced.
Anomalous Electron Storage
Metal-oxide-nitride-oxide-silicon-type Flash Memory
Components, Circuits, Devices And Systems
Engineered Materials, Dielectrics And Plasmas