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Effects of In Situ $\hbox{O}_{2}$ Plasma Treatment on off-State Leakage and Reliability in Metal-Gate/High- $k$

By: Kyong Taek Lee; Jammy, R.; Yoon-Ha Jeong; Hi-Deok Lee; Lee, J.C.; Chang Yong Kang; Byoung Hun Lee; Ook Sang Yoo; Kyung Seok Min; Choi, R.; Byung Sun Ju;

2008 / IEEE

Description

This item was taken from the IEEE Periodical ' Effects of In Situ $\hbox{O}_{2}$ Plasma Treatment on off-State Leakage and Reliability in Metal-Gate/High- $k$ Dielectric MOSFETs ' The effects of in situ O2 plasma treatment on device characteristics and reliability of metal-gate/high-k devices are investigated systematically. It was found that the O2 plasma treatment can be employed for mitigating the formation of a leakage path between the high-k dielectric and the capping nitride layer. It also did not change the threshold voltage (Vth), carrier mobility, or equivalent oxide thickness. Compared with the control samples, the O2 plasma-treated samples achieved a 20-times lower OFF-state current and enhanced hot-carrier-injection stress immunity.