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Comparison of On-The-Fly, DC $I_{d}$–$V_{g}$, and Single-Pulse Methods for Evaluating Threshold Voltage Instability in High-$\kappa$ nM

By: Rino Choi; Heh, D.; Bersuker, G.;

2007 / IEEE

Description

This item was taken from the IEEE Periodical ' Comparison of On-The-Fly, DC $I_{d}$–$V_{g}$, and Single-Pulse Methods for Evaluating Threshold Voltage Instability in High-$\kappa$ nMOSFETs ' Stress-induced degradation of the threshold voltage of high-kappa nMOSFETs measured by on-the-fly and single-pulse methods is investigated. It was found that the relaxation of the stress-induced threshold voltage (Vth) shift during stress interruption (sensing) time is primarily governed by the fast detrapping of charges trapped through the fast transient charging (FTC) process. Subtraction of the FTC contribution from the total stress time-dependent Vth shift provides a practical and convenient method for eliminating a major source of Vth relaxation, which results in identical lifetime estimations by the on-the-fly and pulsed methods